PBSS5160U transistor equivalent, 60v 1a pnp low vcesat (biss) transistor.
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to .
I I I I I High voltage DC-to-DC conversion High voltage MOSFET gate driving High voltage motor control High voltage powe.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160U.
1.2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collect.
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